The IRF3710PBF is an N-Channel Power MOSFET manufactured by Infineon Technologies. Here are the key specifications for this component:
- Part Number: IRF3710PBF
- Transistor Polarity: N-Channel
- Drain-Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 57A
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 28A, 10V
- Vgs (Max): ±20V
- Mounting Type: Through Hole
- Package / Case: TO-220AB
- Supplier Device Package: TO-220AB
- Operating Temperature: -55°C ~ 175°C (TJ)
Description:
The IRF3710PBF is an N-Channel Power MOSFET designed for general-purpose power switching applications. When a positive voltage is applied to the gate relative to the source, the N-Channel MOSFET conducts.
Application:
N-Channel MOSFETs are commonly used in applications requiring high current capability, such as power supplies, motor control, high-power DC-DC converters, and other electronic systems where low on-state resistance, high current capability, and fast switching speeds are important.
Package:
The TO-220AB package is designed for through-hole mounting, offering easy and reliable mounting to printed circuit boards or heat sinks.
Features:
- High Drain-Source Voltage: Suitable for applications requiring a higher voltage capacity.
- Low On-State Resistance: Minimizes power dissipation and enhances power efficiency.
- High Current Capability: Capable of handling high currents, making it suitable for high-power applications.
As with any component, it's important to carefully review the datasheet and consider your project's specific requirements to ensure this MOSFET is suitable for your application.
| DataSheet | IRF3710PBF PDF |
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