The IRF3205PBF is an N-Channel Power MOSFET manufactured by Infineon Technologies. Here are its key specifications:
- Part Number: IRF3205PBF
- Transistor Polarity: N-Channel
- Drain-Source Voltage (Vdss): 55V
- Continuous Drain Current (Id): 110A
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V
- Vgs (Max): ±20V
- Mounting Type: Through Hole
- Package / Case: TO-220AB
- Supplier Device Package: TO-220AB
- Operating Temperature: -55°C ~ 175°C (TJ)
Description:
The IRF3205PBF is an N-Channel Power MOSFET designed for high-power, general-purpose applications. When a positive voltage is applied to the gate relative to the source, the N-Channel MOSFET conducts.
Application:
N-Channel MOSFETs are widely used in applications requiring high current capability, such as power supplies, motor control, high-power DC-DC converters, and other electronic systems where low on-state resistance, high current capability, and fast switching speeds are crucial.
Package:
The TO-220AB package allows for through-hole mounting and is suitable for discrete semiconductors, offering ease of mounting to printed circuit boards or heat sinks.
Features:
- High Drain-Source Voltage: Suitable for applications requiring a higher voltage capacity.
- Low On-State Resistance: Minimizes power dissipation and enhances power efficiency.
- High Current Capability: Capable of handling very high currents, making it suitable for high-power applications.
As always, it's essential to carefully review the datasheet and consider your project's specific requirements to ensure this MOSFET is suitable for your application.
| DataSheet | IRF3205PBF PDF |
|---|
