The BSS138-7-F is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Diodes Incorporated. Here are the key specifications and details about this component:
- Manufacturer: Diodes Incorporated
- Part Number: BSS138-7-F
- Type: N-Channel MOSFET
- Voltage Rating: 50V
- Current Rating: 200mA
- Package: SOT-23-3 (Small Outline Transistor - 3 leads)
-
DataSheet BSS138-7-F PDF
Key Features:
-
N-Channel MOSFET: The BSS138-7-F is an N-channel MOSFET, where current flows from the drain to the source when a voltage is applied at the gate.
-
Voltage Rating (50V): This MOSFET can handle a maximum drain-source voltage of 50V.
-
Current Rating (200mA): The maximum continuous drain current the MOSFET can handle is 200mA.
-
Package (SOT-23-3): The SOT-23-3 package is a small surface-mount package with three pins.
Main Specifications and Uses:
-
Switching Applications: N-channel MOSFETs like the BSS138-7-F are commonly used in switching applications in electronic circuits.
-
Amplification: While primary used for switching, MOSFETs can also be used for signal amplification in certain circuit configurations.
-
Voltage Regulation: Can be part of voltage regulation circuits and low-power applications.
Working Principle:
-
Applying a voltage at the gate terminal creates an electric field that modulates the conductivity between the source and drain terminals.
-
For an N-channel MOSFET like the BSS138-7-F, a positive voltage applied at the gate relative to the source allows current to flow from the drain to the source.
Typical Applications:
-
Low-Power Switching Circuits: Suitable for low-power circuit applications like signal routing or load switching.
-
Level Shifting: Useful for level-shifting applications where input signals need to be translated to a higher or lower voltage.
-
Voltage-Level Translation: Helpful for converting logic levels within digital circuits.
-
Load Switching: Can be used to control the switching of loads in various electronic systems.
Implementation Considerations:
-
Gate Voltage: Ensure the gate voltage remains within specified limits to prevent damage.
-
Current Limits: Adhere to the specified maximum drain current to prevent overloading the MOSFET.
-
Heat Dissipation: Consider heat dissipation needs, especially at higher current levels.
-
Protection Measures: Implement protective features like flyback diodes for inductive loads to prevent voltage spikes.
Before integrating the BSS138-7-F N-channel MOSFET into your circuit design, refer to the datasheet provided by Diodes Incorporated for detailed specifications, application notes, and usage guidelines to ensure reliable and optimal performance for your specific electronic application.
